2.3 0.60 +0.1 -0.1 6.50 +0.15 -0.15 1.50 +0.15 -0.15 0.80 +0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30 +0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.15 2.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3 .8 0 to-252 unit: mm 1 base 2 collector 3 emitter 2SB1182 features low v ce(sat) . epitaxial planar type pnp silicon transistor absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo -40 v collector-emitter voltage v ceo -32 v emitter-base voltage v ebo -5 v collector current i c -2 a collector current pulse i cp -3 a collector power dissipation(tc=25 ) p c 10 w junction temperature tj 150 storage temperature t stg -55to+150 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector-base breakdown voltage bv cbo i c =-50a -40 v collector-emitter breakdown voltage bv ceo i c =-1ma -32 v emitter-base breakdown voltage bv ebo i e =-50a -5 v collector cutoff current i cbo v cb =-20v -1 a emitter cutoff current i ebo v eb =-4v -1 a collector-emitter saturation voltage v ce(sat) i c =-2a,i b = -0.2a -0.5 -0.8 v dc current transfer ratio h fe v ce =-3v,i c = -0.5a 82 390 output capacitance f t v ce =-5v,i e =0.5a, f=100mhz 100 mhz transition frequency c ob v cb = -10v,i e =0a,f=1mhz 50 pf h fe classification rank p q r hfe 82 180 120 270 180 390 product specification sales@twtysemi.com 1 of 1 http://www.twtysemi.com 4008-318-123
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